1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
2N7002KA
N-channel TrenchMOS FET
Rev. 03 — 25 February 2008 Product data sheet
n Logic level compatible n Very fast switching
n Subminiature surface-mounted package n Gate-source ElectroStatic Discharge
(ESD) protection diodes
n Relay driver n High-speed line driver
n V
DS
≤ 60 V n I
D
≤ 320 mA
n R
DSon
≤ 4.4 Ω n P
tot
≤ 0.83 W
Table 1. Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT23 (TO-236AB)
2 source (S)
3 drain (D)
12
3
G
D
S
003aac036
