2N7002KW
115mA , 60V, R
DS(ON)
4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
SO
-323
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
R
DS(ON)
, V
GS
@10V, I
DS
@500mA=3
R
DS(ON)
, V
GS
@4.5V, I
DS
@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
MARKING
K72
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
115 mA
Pulsed Drain Current
1
I
DM
800 mA
Maximum Power Dissipation
T
A
=25°C
P
D
200
mW
T
A
=75°C
120
Thermal Resistance Junction-Ambient (PCB mounted)
2
R
JA
625
°C / W
Operating Junction and Storage Temperature
T
J
, T
STG
-55~150
°C
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
Gate
Source
Drain
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
