Elektronische Bauelemente
2N7002KT
N-Channel Enhancement MOSFET
29-Apr-2013 Rev. A Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RS
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Gate Charge for Fast Switching.
ESD Protected Gate.
APPLICATIONS
Power Management Load Switch
ESD Protected:1500V
Easily designed drive circuits
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-523 3K 7 inch
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage(Continuous) V
GSS
±20 V
Continuous I
D
115
Drain Current
Pulsed I
DP
1
800
mA
Continuous I
Dr
115
Reverse drain current
Pulsed I
DRP
1
800
mA
Total Power Dissipation P
D
2
225 mW
Channel temperature T
J
150 °C
Operating Storage Temperature Range T
STG
-55~150 °C
Note
1.
Pw ≦10 µs, Duty cycle ≦1 %
2.
When mounted on a 1*0.75*0.062 inch glass epoxy board
REF.
REF.
D 0.23
0.33
S 1.50
1.70
G 0.50BSC
J 0.10
0.20
