2013. 7. 19 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7002KDU
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
1. Q SOURCE
4. Q SOURCE
3. Q DRAIN
5. Q GATE
6. Q DRAIN
2. Q GATE
EQUIVALENT CIRCUIT
Marking
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Surface Mounted on 2
2 FR4 Board
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
300
mA
Pulsed
(Note 1)
I
DP
1200
Drain Power Dissipation
(Note 2)
P
D
270 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
(Note 2)
R
thJA
460
/W