2011. 4. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
2N7002KA
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V, V
GS
=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
V
GS
=20V, V
DS
=0V
- - 10
A
Gate-Body Leakage, Reverse
I
GSSR
V
GS
=-20V, V
DS
=0V
- - -10
A
ESD-Capability* -
C=100pF, R=1.5K
Both forward and reverse
direction 3 pulse
2000 - - V
G
D
S
Type Name
Marking
Lot No.
2P
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
300
mA
Pulsed (Note 1)
I
DP
1200
Drain Power Dissipation (Note 2)
P
D
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on 99% Alumina 10
8 0.6mm
*Failure cirterion : I
DSS
> 1 A at V
DS
=60V, I
GSSF
>10 A at V
GS
=20V, I
GSSR
>-10 A at V
GS
=-20V.
