2N7002K
TrenchMOS™ logic level FET
Rev. 01 — 20 October 2003 Product data
M3D088
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
■ Logic level compatible ■ Very fast switching
■ Subminiature surface mount package ■ Gate-source ESD protection diodes.
■ Relay driver ■ High speed line driver.
■ V
DS
≤ 60 V ■ I
D
≤ 340 mA
■ P
tot
≤ 0.83 W ■ R
DSon
≤ 3.9 Ω.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003
Top view
12
3
g
d
s
03ab60
