1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
2N7002F
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006 Product data sheet
■ Logic level threshold compatible ■ Very fast switching
■ Surface-mounted package ■ TrenchMOS technology
■ Logic level translator ■ High-speed line driver
■ V
DS
≤ 60 V ■ I
D
≤ 475 mA
■ R
DSon
≤ 2 Ω ■ P
tot
≤ 0.83 W
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT23
2 source (S)
3 drain (D)
12
3
S
D
G
mbb076
