Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
Elektronische Bauelemente
MAXIMUM R AT INGS
R ating S ymbol Value Unit
Drain–Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 M
Ω
) V
DGR
60 Vdc
Gate–Source Voltage
– Continuous
V
GS
±
–
+150
55 ~
20
Vdc
THE R MAL C HAR A C T E R IS TIC S
C haracteris tic S ymbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
P
D
150
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JAθ
625 °C/W
Junction and Storage Temperature
T
J
, T
stg
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
S
1
D
1
D
2
S
2
G
1
G
2
MAR K ING DIA G R A M
Κ72
01-Jan-2006 Rev. B
Page 1 of 3
W
Small Signal MOSFET
115 mAMPS, 60VOLTS, R
DS(on)
=7.5
2N7002DW
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–363
SOT-363
Dimensions in inches and (millimeters)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.096(2.45)
.085(2.15)
.021REF
(0.525)REF
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.053(1.35)
.045(1.15)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
.004(0.10)
.000(0.00)
8
o
o
0
RoHS Compliant Product
≦
≦