OptiMOS
™
Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Parameter
1)
Symbol Conditions Unit
Avalanche energy, single pulse
E
AS
I
D
=0.3 A, R
GS
=25 W
1.3 mJ
Reverse diode dv/dt dv /dt
I
D
=0.3 A, V
DS
=48 V,
di/dt =200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
ESD class JESD22-A114 (HBM) class 0 (<250V)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1 55/150/56
1)
Remark: one of both transistors in operation.
Tape and Reel Information
Rev.2.3 page 1 2014-09-19
