1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small
SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Rev. 2 — 22 September 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
amb
=25°C--60V
V
GS
gate-source voltage T
amb
=25°C--±20 V
I
D
drain current T
amb
=25°C;
V
GS
=10V
[1]
--340mA
R
DSon
drain-source on-st a te
resistance
T
j
=25°C;
V
GS
=10V;
I
D
= 500 mA
-11.6Ω
