2008. 4. 4 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 5
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V, V
GS
=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
V
GS
=20V, V
DS
=0V
- - 1
A
Gate-Body Leakage, Reverse
I
GSSR
V
GS
=-20V, V
DS
=0V
- - -1
A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage (R
GS
1 )
V
DGR
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
115
mA
Pulsed
I
DP
800
Drain Power Dissipation
P
D
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
