Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6
N-Channel Enhancement Mode Power Mos.FET
Description
The 2N7000 is designed for high voltage, high
speed applications such as switching regulators,
converters, solenoid and relay drives.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
-Continuous
VGSM
Drain Current
Power Dissipation
Thermal Resistance, Junction-To-Ambient
mA
V
V
mA
V
ID
mW/
W
VDS
VGS
- TA=25
IDM
PD
25
RθJA
60
±20
500
200
0.35
2.8
357
Parameter Symbol Ratings Unit
C
o
C
o
Operating Junction and Storage Temperature Range
C
Tj, Tstg
-55~+150
o
/W
±40
-Non-Repetitive (tp 50us)
-Continuous
-Pulsed
-Derate Above
C
o
C
o
Max. Lead Temperature For Soldering Purposes,
1/16" From Case For 10 Seconds
C
TL
300
o
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
Source
Drain
Gate
L
e1
b
e
SEATING
PLANE
b1
A
D
C
S1
E
REF.
Min. Max.
REF.
Min. Max.
A 4.45 4.7 D 4.44 4.7
S
1
1.02 - E 3.30 3.81
b 0.36 0.51 L 12.70
-
b
1
0.36 0.76 e1 1.150
1.390
C 0.36 0.51 e 2.42 2.66
Millimeter Millimeter
TO-92
RoHS Compliant Product
