2009. 11. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7000A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 3
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. SOURCE
2. GATE
3. DRAIN
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=10 A
60 - - V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=48V, V
GS
=0V
- - 1
A
Gate-Body Leakage, Forward
I
GSSF
V
GS
=15V, V
DS
=0V
- - 1
A
Gate-Body Leakage, Reverse
I
GSSR
V
GS
=-15V, V
DS
=0V
- - -1
A
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage (R
GS
1 )
V
DGR
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
200
mA
Pulsed
I
DP
500
Drain Power Dissipation
P
D
400 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
