PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* Gain of 20 at I
C
= 0.5 Amp
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT
Collector-Base Voltage V
CBO
-60 -80 -100 V
Collector-Emitter Voltage V
CEO
-60 -80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60 -80 -100 V I
C
=-0.1mA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60 -80 -100 V I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 -5 V I
E
=-1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
-1
-1
-1
µA
µA
µA
V
CB
=-60V, I
E
=0
V
CB
=-80V, I
E
=0
V
CB
=-100V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-1 -1 -1
µA
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.35
-0.5
-0.35
-0.5
-0.35
VI
C
=-250mA,I
B
=-10mA*
I
C
=-250mA,I
B
=-25mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.2 -1.2 -1.2 V IC=-250mA, V
CE
=-1V*
Static Forward
Current Transfer
Ratio
h
FE
80
50
20
250
80
50
20
250
80
50
20
250
I
C
=-50mA, V
CE
=-1V*
I
C
=-250mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
Transition
Frequency
f
T
50 500 50 500 50 500 MHz I
C
=-50mA, V
CE
=-10V
Collector Base
Capacitance
C
CB
30 30 30 pF V
CE
=-10V, f=1MHz
E-Line
TO92 Compatible
2N6728
2N6729
2N6730
3-9
C
B
E
