2N6727
-1.5 A, -50V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
13-Jan-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
A
CE
K
F
D
B
G
H
J
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching Application
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-50 V
Collector to Emitter Voltage V
CEO
-40 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-1.5 A
Collector Power Dissipation P
C
1 W
Thermal resistance, Junction to ambient R
θJA
125 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
-50 - - V I
C
= -1mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-40 - - V I
C
= -10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -1mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 μA V
CB
= -50V, I
E
=0
Collector Cut-Off Current I
CEO
- - -1 μA V
CE
= -40V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 μA V
EB
= -5V, I
C
=0
DC Current Gain
h
FE (1)
50 - 250
V
CE
= -1V, I
C
= -1A
h
FE (2)
55 - - V
CE
= -1V, I
C
= -10mA
h
FE (3)
60 - - V
CE
= -1V, I
C
= -100mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
= -1A, I
B
= -100mA
Base to Emitter Voltage V
BE
- - -1.2 V V
CE
= -1V, I
C
= -1A
Collector Output Capacitance C
ob
- - 30 pF V
CB
= -10V, I
E
=0A, f=1MHz
Emitte
Base
Collector
TO-92
REF.
Millimete
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
