PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt V
CEO
* Gain of 50 at I
C
= 1 Amp
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6726 2N6727 UNIT
Collector-Base Voltage V
CBO
-40 -50 V
Collector-Emitter Voltage V
CEO
-30 -40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6726 2N6727 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40 -50 V I
C
=-1mA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30 -40 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V I
E
=-1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µA
µA
V
CB
=-40V, I
E
=0
V
CB
=-50V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 -0.5 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.2 -1.2 V IC=-1A, V
CE
=-1V*
Static Forward
Current Transfer Ratio
h
FE
55
60
50 250
55
60
50 250
I
C
=-10mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
Transition
Frequency
f
T
50 500 50 500 MHz I
C
=-50mA, V
CE
=-10V
Collector Base
Capacitance
C
CB
30 30 pF V
CE
=-10V, f=1MHz
E-Line
TO92 Compatible
2N6726
2N6727
3-8
C
B
E