NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 50 Volt V
CEO
* Gain of 15k at I
C
= 0.5 Amp
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6724 2N6725 UNIT
Collector-Base Voltage V
CBO
50 60 V
Collector-Emitter Voltage V
CEO
40 50 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6724 2N6725 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50 60 V
I
C
=1µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40 50 V I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 10 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
1.0
1.0
µA
µA
V
CB
=30V, I
E
=0
V
CB
=40V, I
E
=0
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µ
A
V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.0
1.5
1.0
1.5
V
V
I
C
=200mA, I
B
=2mA*
I
C
=1A, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
2.0 2.0 V IC=1A, I
B
=2mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
2.0 2.0 V IC=1A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
25K
15K
4K 40K
25K
15K
4K 40K
I
C
=200mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
Collector Base
Capacitance
C
CB
10 10 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6724
2N6725
3-7
C
B
E