NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* Gain of 20 at I
C
= 0.5 Amp
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT
Collector-Base Voltage V
CBO
60 80 100 V
Collector-Emitter Voltage V
CEO
60 80 100 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V
(BR)CBO
60 80 100 V I
C
=0.1mA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60 80 100 V I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
555VI
E
=1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
1
1
1
µA
µA
µA
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
Emitter Cut-Off
Current
I
EBO
111
µA
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.35
0.5
0.35
0.5
0.35
VI
C
=250mA, I
B
=10mA*
I
C
=250mA,I
B
=25mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.2 1.2 1.2 V IC=250mA, V
CE
=1V*
Static Forward
Current Transfer
Ratio
h
FE
80
50
20
250
80
50
20
250
80
50
20
250
I
C
=50mA, V
CE
=1V*
I
C
=250mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition
Frequency
f
T
50 500 50 500 50 500 MHz I
C
=50mA, V
CE
=10V
Collector Base
Capacitance
C
CB
30 30 30 pF V
CE
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6716
2N6717
2N6718
3-6
C
B
E
