NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt V
CEO
* Gain of 50 at I
C
= 1 Amp
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6714 2N6715 UNIT
Collector-Base Voltage V
CBO
40 50 V
Collector-Emitter Voltage V
CEO
30 40 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
= 25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6714 2N6715 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40 50 V I
C
=1mA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30 40 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55VI
E
=1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
0.1
µA
µA
V
CB
=40V, I
E
=0
V
CB
=50V, I
E
=0
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 0.5 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.2 1.2 V IC=1A, V
CE
=1V*
Static Forward
Current Transfer
Ratio
h
FE
55
60
50 250
55
60
50 250
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
Transition
Frequency
f
T
50 500 50 500 MHz I
C
=50mA, V
CE
=10V
Collector Base
Capacitance
C
CB
30 30 pF V
CE
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6714
2N6715
3-5
C
B
E