2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
■ SGS -THO MS ON PRE F ERRE D SALES T YP E
■ PNP DARLI NG T O N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
July 1997
R1(typ) = 8 kΩ R2(typ) = 120 Ω
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value U nit
V
CBO
Collector-Base Voltage (I
E
= 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 250 m A
P
tot
Total Dissipation at T
c
≤ 25
o
C65W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP type voltage and curr ent values are negative.
1
2
3
TO-220
1/4