NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 350 Volt V
CEO
* Gain of 15 at I
C
=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
350 V
Collector-Emitter Voltage V
CEO
350 V
Emitter-Base Voltage V
EBO
6V
Base Current I
B
250 mA
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
= 25°C P
tot
680 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
350 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
350 V I
C
=1mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
50 nA V
CB
=250V, I
E
=0
Emitter Cut-Off Current I
EBO
50 nA V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.35
0.5
1.0
V
V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
I
C
=50mA, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.80
0.85
0.90
V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
2.0 V IC=100mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
20
30
30
20
15
200
200
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency f
T
40 MHz I
C
=10mA, V
CE
=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6517
3-3
C
B
E
