2N6388
SILICON NPN POWER DARLINGTON TRANSISTO R
■ STMicr o electronics PREF E RRED
SALESTYPE
■ NPN DARLINGTON
■ HIGH CURRENT CAPABILITY
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon Epitaxial-Base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plas tic package.
It is inteded for use in low and medium frequency
power applications.
®
INT E R NAL SCH E M ATI C DIAG RA M
August 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value U nit
V
CBO
Collector-Base Voltage (I
B
= 0) 80 V
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V) 80 V
V
CER
Collector-Emitter Voltage (R
BE
≤ 100Ω)
80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.25 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
65 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
R
1
Typ. = 10 KΩ R
2
Typ. = 160 Ω
1
2
3
TO-220
1/5
