2N6284
2N6287
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■ STMicroelec tronic s PREF ERRE D
SALESTYPES
■ COMP LEM EN TARY PNP - NPN DE VICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6284 is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
confi guration mounted in Jed ec TO-3 met al case.
It is inteded for general purpose amplifier and low
frequency switching applications.
Th e complementary PNP types is 2N6287.
INTERNAL SCHEMATI C DIAG RAM
December 2000
1
2
TO-3
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value U nit
NPN 2N6284
PNP 2N 6287
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 20 A
I
CM
Collector Peak Current 40 A
I
B
Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C 160 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 8 KΩ R
2
Typ. = 60 Ω
®
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