2N6036
2N6039
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■ 2N6036 IS A STM icroelectronic s
PREFERRED SALESTYPE
■ COMP LEM EN TARY PNP - NPN DE VICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The 2N6036 and 2N6039 are complementary
silicon power Darlington transistors mounted in
Jedec SOT-32 plastic package.
®
INTERNAL SCHEMATIC DIAG RAM
December 2000
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value U nit
PNP 2N6036
NPN 2N6039
V
CBO
Collector-Base Voltage (I
E
= 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current 8 A
I
B
Base Current 0.1 A
P
tot
Total Dissipation at T
c
≤ 25
o
C40W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
R
1
Typ. = 7 KΩ R
2
Typ. = 230 Ω
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