2N5884
2N5886
COMPLEMENTARY SILICON
HIGH POWER TRANSISTORS
■ SGS -THO MS ON PRE F ERRE D SALES T YP E S
■ CO MPLEM EN TARY PNP - NPN DEVICES
■ HIGH CURRENT CAPABILITY
APPLICATIONS
■ GENERAL PUR POSE SW ITC HING AND
AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications .
INTERNAL SCHEMATI C DIAG RAM
June 1997
1
2
TO-3
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value U nit
PNP 2N5884
NPN 2N5886
V
CBO
Collector-Base Voltage (I
E
= 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 25 A
I
CM
Collector Peak C urrent 50 A
I
B
Base Current 7.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C 200 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and curr ent values are negative.
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