1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: V
CBO
=180V, V
CEO
=160V
Low Leakage Current.
: I
CBO
=50nA(Max.) V
CB
=120V
Low Saturation Voltage
: V
CE(sat)
=0.2V(Max.) I
C
=50mA, I
B
=5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
600 mA
Base Current
I
B
100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Lot No.