Elektronische Bauelemente
2N5550
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
8-Mar-2010 Rev. A Page 1 of 2
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Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.160V)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
CBO
160 V
Collector to Emitter Voltage V
CEO
140 V
Emitter to Base Voltage V
EBO
6 V
Collector Current - Continuous I
C
0.6 A
Collector Power Dissipation P
C
0.625 W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
Collector to Base Breakdown Voltage V
(BR)CBO
160 - - V I
C
=100µA, I
E
= 0A
Collector to Emitter Breakdown Voltage V
(BR)CEO
140 - - V I
C
=1mA, I
B
= 0A
Emitter to Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=10µA, I
C
= 0A
Collector Cut-Off Current I
CBO
- - 0.1 µA V
CB
=100V, I
E
= 0 A
Emitter Cut-Off Current I
EBO
- - 0.05 µA V
EB
=4 V, I
C
=0 mA
h
FE1
60 - - V
CE
=5V, I
C
=1mA
h
FE2
60 - 250 V
CE
=5V, I
C
=10mA
DC Current Gain
h
FE3
20 - - V
CE
=5V, I
C
=50mA
- - 0.15 V I
C
=10mA, I
B
=1mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.25 V I
C
=50mA, I
B
=5mA
- - 1 V I
C
=10mA, I
B
=1mA
Base to Emitter Voltage V
BE(sat)
- - 1.2 V I
C
=50mA, I
B
=5mA
Collector Output Capacitance C
ob
- - 6 pF V
CB
= 10V, I
E
= 0A, f=1MHz
Transition Frequency f
T
100 - 300 MHz V
CE
= 10V, I
C
= 10mA, f=100MHz
Noise Figure NF - - 10 dB
V
CE
=5V, I
C
= 0.25mA,
f=1KHz, R
S
=1kΩ
TO-92
REF.