Elektronische Bauelemente
2N5401
-0.6 A, -160 V
PNP Plastic Encapsulated Transistor
4-Feb-2010 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current (max. 600mA)
High voltage (max. 160V)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
CBO
-160 V
Collector to Emitter Voltage V
CEO
-150 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-0.6 A
Collector Power Dissipation P
C
0.625 W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
Collector to Base Breakdown Voltage V
(BR)CBO
-160 - - V I
C
=-100µA, I
E
= 0A
Collector to Emitter Breakdown Voltage V
(BR)CEO
-150 - - V I
C
=-1mA, I
B
= 0A
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
=-10µA, I
C
= 0A
Collector Cut-Off Current I
CBO
- - -50 nA V
CB
=-120 V, I
E
= 0 A
Emitter Cut-Off Current I
EBO
- - -50 nA V
EB
=-3 V, I
C
= 0 A
h
FE(1)
80 - - V
CE
=-5V, I
C
=-1mA
h
FE(2)
60 - 240 V
CE
=-5V, I
C
=-10mA
DC Current Gain
h
FE(3)
50 - - V
CE
=-5V, I
C
=-50mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
=-50mA, I
B
=-5mA
Base to Emitter Saturation Voltage V
BE(sat)
- - -1 V I
C
=-50mA, I
B
=-5mA
Transition Frequency f
T
100 - 300 MHz V
CE
= -5V, I
C
= -10mA, f=30MHz
TO-92
REF.
