This is information on a product in full production.
October 2012 Doc ID 16934 Rev 3 1/10
10
2N5401HR
Hi-Rel PNP bipolar transistor 150 V, 0.5 A
Datasheet — production data
Features
■ Hi-Rel PNP bipolar transistor
■ Linear gain characteristics
■ ESCC qualified
■ European preferred part list - EPPL
■ 100 krad low dose rate
■ Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N5401HR is a silicon planar epitaxial PNP
transistor available in TO-18 and LCC-3
packages. It is specifically designed for
aerospace Hi-Rel applications and ESCC
qualified according to the 5202-014 specification.
In case of conflict between this datasheet and
ESCC detailed specification, the latter prevails.
Figure 1. Internal schematic diagram
BV
CEO
150 V
I
C
(max) 0.5 A
H
FE
at 10 V - 150 mA > 60
Operating temperature range -65°C to +200°C
3
1
2
Table 1. Device summary
Order codes ESCC part num. Quality level Rad level Packages Lead finish Mass (g) EPPL
2N5401UB1 - Eng. Model LCC-3UB Gold 0.06 -
2N5401SW 5202/014/05 ESCC Flight 100 krad LCC-3 Solder Dip 0.06 Y
2N5401UB06 5202/014/06 ESCC Flight LCC-3UB Gold 0.06 -
2N5401UB07 5202/014/07 ESCC Flight LCC-3UB Solder Dip 0.06 -
SOC5401 - Eng. Model LCC-3 Gold 0.06 -
SOC5401HRB 5202/014/04 or 05 ESCC Flight LCC-3 Gold/Solder Dip
(1)
0.06 Y
2N5401/T1 - Eng. Model TO-18 Gold 0.40 -
2N5401HR 5202/014/01 or 02 ESCC Flight TO-18 Gold/Solder Dip
(1)
0.40 -
1. Depending ESCC part number mentioned on the purchase order.
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