1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5400S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: V
CBO
=-130V, V
CEO
=-120V
Low Leakage Current.
: I
CBO
=-100nA(Max.) @V
CB
=-100V
Low Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) @I
C
=-50mA, I
B
=-5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-130 V
Collector-Emitter Voltage
V
CEO
-120 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-600 mA
Base Current
I
B
-100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Lot No.
