Elektronische Bauelemente
2N4403
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
4.55±0.2
3.5
±0.2
4.5±0.2
14.3
±0.2
2.54
±0.1
(1.27 Typ.)
0.
46
+0.1
–0.1
0.43
+0.08
–0.07
132
1: Emitter
2: Base
3: Collector
1.25
–0.2
+0.2
TO-92
FEATURES
Power Dissipation
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Symbol
Parameter
Value Units
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
-40
-40
-6
-0.75
C
o
C
o
C
o
C
o
C
o
01-Jun-2002 Rev. A
Page 1 of 3
PNP Transistor
Plastic-Encapsulate Transistors
V
CBO
Collector-Base Voltage
-40
V
CEO
Collector-Emitter Voltage
-40
V
EBO
Emitter-Base Voltage
-5 V
I
C
Collector Current -Continuous
-600
P
C
*
Collector Power dissipation
0.625
T
J
Junction Temperature
150
T
stg
S torage Temperature
-55to +150
R
θ
JA
Thermal Resistance, junction to Ambient
357
/mW
V
V
mA
W
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-100µA,I
E
=0 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100µA,I
C
=0 V
Collector cut-off current
I
CBO
V
CB
=-35V,I
E
=0 -100 nA
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0 -100 nA
h
FE(1)
V
CE
=-1V,I
C
=-0.1mA 30
h
FE(2)
V
CE
=-1V,I
C
=-1mA 60
h
FE(3)
V
CE
=-1V,I
C
=-10mA 100
h
FE(4)
V
CE
=-1V,I
C
=-150mA 100 300
DC current gain
h
FE(5)
V
CE
=-2V,I
C
=-500mA 20
V
CE(sat)1
I
C
=-150mA,I
B
=-15mA -0.4 V
Collector-emitter saturation voltage
V
CE(sat)2
I
C
=-500mA,I
B
=-50mA -0.75 V
V
BE(sat)1
I
C
=-150mA,I
B
=-15mA -0.95 V
Base-emitter saturation voltage
V
BE(sat)2
I
C
=-500mA,I
B
=-50mA -1.3 V
Transition frequency
f
T
V
CE
=-10V,I
C
=-20mA,f=100MHz
200
MHz
Collector capacitance
C
ob
V
CB
=-10V,I
E
=0,f=100KHz 8.5 pF
Delay time
t
d
15 nS
Rise time
t
r
20 nS
Storage time
t
S
225 nS
Fall time
t
f
V
CC
=-30V, I
C
=-150mA
I
B1
=- I
B2
=-15mA
30 nS
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
