2003. 12. 12 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N3906E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=-5V.
Complementary to 2N3904E.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
