Elektronische Bauelemente
2N3904
NPN Silicon
General Purpose Transistor
TO-92
ƔFEATURES
. Power Dissipation
P
CM
: 625 mW (Ta=25к)
. Collect or Current
I
CM
: 200 mA
. Collect or - Base Voltage
V
(BR)CBO
: 60 V
ƔELECTRICAL CHARACTERISTICS (T
A
= 25
к
unless otherwise specified)
Parameter SYMBOL TEST CONDITIONS Min. Typ. Max. UNIT
Collector - Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1 mA, I
B
= 0 A 40 - - V
Collector - Base Breakdown Voltage V
(BR)CBO
I
C
= 100 µA, I
E
= 0 A 60 - - V
Emitter - Base Breakdown Voltage V
(BR)EBO
I
E
= 100 µA, I
C
= 0 A 6 - - V
Collect or Cut-Off Current I
CBO
V
CB
= 60 V, I
E
= 0 A - - 0.1
Collect or Cut-Off Current I
CEO
V
CE
= 40 V, I
B
= 0 A - - 0.1
Emitter Cut-Off Current I
EBO
V
EB
= 5 V, I
C
= 0 A - - 0.1
µA
h
FE(1)
V
CE
= 1 V, I
C
= 10 mA 100 - 400
DC Current Gain
h
FE(2)
V
CE
= 1 V, I
C
= 50 mA 60 - -
-
Collector - Emitter Saturation Voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA - - 0.3 V
Base - Emitter Saturat i on Voltage V
BE(sat)
I
C
= 50 mA, I
B
= 5 mA - - 0.95 V
V
CE
= 20 V, I
C
= 10 mA
Transition Frequency f
T
f = 100 MHz
300 - - MHz
Operating and S torage Junction Te mperature Range T
J
, T
STG
- -55 ~ +150
к
ƔCLASSIFICATION OF h
FE(1)
Rank O Y G
Rang 100 ~ 200 200 ~ 300 300 ~ 400
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
COLLECTOR
BASE
EMITTER
1
2
3
3
2
1
01-Jun-2002 Rev. A
Page 1 of 3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
