Elektronische Bauelemente
2N3904
0.2A, 60V
NPN General Purpose Transistor
31-Dec-2010 Rev.B Page 1 of 3
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RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation P
CM
: 625mW (Ta=25°C)
Collector Current I
CM
: 200mA
Collector – Base Voltage V
(BR)CBO
: 60V
CLASSIFICATION OF h
FE(1)
Product-Rank
2N3904-O 2N3904-Y 2N3904-G
Range
100~200 200~300 300~400
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage V
CBO
60 V
Collector - Emitter Voltage V
CEO
40 V
Emitter - Base Voltage V
EBO
6 V
Collector Current -Continuous I
C
0.2
A
Cpllector Power Dissipation P
C
625 mW
Junction, Storage Temperature T
J
, T
STG
+150, -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max.
Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=10µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 - - V I
C
=1mA, I
B
=0
Emitter - Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1
µ
A V
CB
=60V, I
E
=0
Collector Cut-Off Current I
CEO
0.1
µ
A
V
CE
=40V, I
B
=0
Emitter Cut-Off Current I
EBO
- - 0.1
µ
A V
EB
=5V, I
C
=0
h
FE(1)
100 - 400 V
CE
=1V, I
C
=10mA
DC Current Gain
h
FE(2)
60 - - V
CE
=1V, I
C
=50mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=50mA, I
B
=5mA
Base-Emitter Saturation Voltage V
BE(sat)
- - 0.95 V I
C
=50mA, I
B
=5mA
Transition Frequency f
T
300 - - MHz V
CE
=20V, I
C
=10mA, f=100MHz
TO-92
REF.
2
22
2Base
3
33
3Collector
Base
Emitter
Collector
3