2N3828
0.1 A, 40 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
29-Dec-2010 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
A
CE
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
40 V
Collector to Emitter Voltage V
CEO
40 V
Emitter to Base Voltage V
EBO
3 V
Collector Current - Continuous I
C
0.1 A
Collector Power Dissipation P
C
300 mW
Thermal resistance, junction to ambient R
θJA
416 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
40 - - V I
C
= 0.01mA, I
E
= 0A
Collector to Emitter Breakdown Voltage V
(BR)CEO
40 - - V I
C
= 1mA, I
B
= 0A
Emitter to Base Breakdown Voltage V
(BR)EBO
3 - - V I
E
= 0.01mA, I
C
= 0A
Collector Cut-Off Current I
CBO
- - 0.1 μA V
CB
= 60V, I
E
= 0 A
Collector Cut-Off Current I
CEX
- - 50 nA V
CE
= 30V, V
BE(off)
= 3V
Emitter Cut-Off Current I
EBO
- - 0.1 μA V
EB
= 5V, I
C
=0 mA
DC Current Gain h
FE
30 - 200 V
CE
= 1V, I
C
= 12mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
= 50mA, I
B
= 5mA
Base to Emitter Saturation Voltage V
BE(sat)
- - 0.95 V I
C
= 50mA, I
B
= 5mA
Transition Frequency f
T
360 - - MHz V
CE
= 20V, I
C
= 10mA, f=100MHz
.
TO-92
REF.
Millimete
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Emitte
Base
Collector