2N3055
MJ2955
COMPLEMENTARY SILICON POWER TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
CO MPLE ME NTA RY NP N-PNP DEVICE S
DESCRIP TION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifie rs.
The complem entary PNP type is MJ2955.
INTERNAL SCHEMATIC DIAGRAM
August 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N3055
PNP MJ2955
V
CBO
Collector-Base Voltag e (I
E
= 0) 100 V
V
CER
Collector-Emitte r Voltage (R
BE
≤ 100Ω
)
70 V
V
CEO
Collector-Emitte r Voltage (I
B
= 0) 60 V
V
EBO
Emitter-Base Voltag e (I
C
= 0) 7 V
I
C
Collector Current 15 A
I
B
Base Current 7 A
P
tot
Total Dissipation at T
c
≤
25
o
C
115 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types volta ge and current values are negative.
1
2
TO-3
®
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