Elektronische Bauelemente
2N2907A
PNP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–60 Vdc
V
CBO
–60 Vdc
Emitter–Base V oltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–40 — Vdc
Collector–Base Breakdown Voltage
(I
C
= –10 Adc, I
E
= 0)
V
(BR)CBO
–60 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 Adc, I
C
= 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cut-off Current
(V
CE
= –50 Vdc, V
EB(off)
= –0.5 Vdc)
I
CEX
— –50 nAdc
Collector Cut-off Current
(V
CB
= –50 Vdc, I
E
= 0)
(V
CB
= –50 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
—
—
–0.10
–15
µAdc
Emitter Cut-off Current
(V
EB
= –3.0 Vdc)
I
EBO
— –100 nAdc
Collector Cut-off Current
(V
CE
= –35 V)
I
CEO
— –100 nAdc
Base Cut-off Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
I
BEX
— –50 nAdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
TO–92
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
Features
Collector±Base Voltage
Epitaxial Planar Die Construction
Complementary NPN Type Available 2N2222A
Ideal for Medium Power Amplification and Switching
01-Jun-2002 Rev. A
Page 1 of 5
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free