This is information on a product in full production.
September 2013 DocID15382 Rev 6 1/21
2N2907AHR
Hi-Rel 60 V, 0.6 A PNP transistor
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Hermetic packages
• ESCC and JANS qualified
• European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
3
1
2
4
Pin 4 in UB is connected to the metallic lid.
UB
Parameter Value
BV
CEO
60 V
I
C
(max) 0.6 A
H
FE
at 10 V - 150 mA > 100
Table 1. Device summary
Device
Qualification
system
Agency specification Package Radiation level EPPL
JANS2N2907AUBx JANS MIL-PRF-19500/291 UB - -
2N2907ARUBx ESCC 5202/001 UB 100 krad ESCC Target
2N2907AUB0xSW35 ESCC 5202/001 UB 100 krad SW -
2N2907AUB0x ESCC 5202/001 UB - Target
SOC2907ARHRx ESCC 5202/001 LCC-3 100 krad ESCC Yes
SOC2907ASW35 ESCC 5202/001 LCC-3 100 krad SW -
SOC2907AHRB ESCC 5202/001 LCC-3 - Yes
2N2907ARHRx ESCC 5202/001 TO-18 100 krad ESCC -
2N2907ASW35 ESCC 5202/001 TO-18 100 krad SW -
2N2907AHR ESCC 5202/001 TO-18 - -
www.st.com
