2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2906U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
1
Q1 Q2
23
654
ZC
123
456
Lot No.
Type Name
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
