2002. 9. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
1
Q1
23
65 4
Q2
Type Name
Marking
Z A
EQUIVALENT CIRCUIT (TOP VIEW)
