2N2905
2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. They are designed for high speed saturated
switching and general purposeapplication.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Sym b o l Param et er Va l u e U n i t
V
CB O
Collect or-Bas e Voltage (I
E
=0) -60 V
V
CE O
Collect or-Em itt er V oltage (I
B
=0) -40 V
V
EBO
Emitter-Base Voltage (I
C
=0) -5 V
I
C
Collector Cur rent -0.6 A
P
tot
Tot al Dis sipat ion at T
amb
≤ 25
o
C
for 2N2905
for 2N2907
at T
case
≤ 25
o
C
for 2N2905
for 2N2907
0.6
0.4
3
1.8
W
W
W
W
T
stg
Stora ge Temper at u re - 65 to 200
o
C
T
j
Max . O per at i ng J unc t i on Temper at u r e 2 00
o
C
TO-18 TO-39
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
availableon request.
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