MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
P
T
V
CBO
V
EBO
V
CEO
I
C
T
J
and T
STG
R
θJA
R
θJC
Types
T
A
= +25°C
mW V dc V dc V dc mA dc
°C °C/W °C/W
2N2484 500 (1) 60 6 60 50 -65 to +200 325 146
2N2484UA 650 (2) 60 6 60 50 -65 to +200 210 160
2N2484UB 500 (1) 60 6 60 50 -65 to +200 325 146
(1) Derate linearly at 3.08 mW/°C above T
A
= +37.5°C
(2) Derate linearly at 4.76 mW/°C above T
A
= +63.5°C.
1.4 Primary electrical characteristics.
h
fe
C
obo
|h
fe
|2 V
CE(sat)
(1)
Limits
V
CE
= 5 V dc
I
C
= 1 mA dc
f = 1 kHz
I
E
= 0
V
CB
= 5 V dc
100 kHz ≤ f ≤ 1 MHz
I
C
= 500 µA dc
V
CE
= 5 V dc
f = 30 MHz
I
C
= 1.0 mA dc
I
B
= 0.1 mA dc
Min
Max
250
900
pF
5.0
2.0
7.0
V dc
0.3
(1) Pulsed (see 4.5.1).
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
