2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
®
INT ERNAL SCHEM ATIC DIAG RAM
February 2003
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 75 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 40 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 6 V
I
C
Collector Current 0.6 A
I
CM
Collector Peak Current (t
p
< 5 ms) 0.8 A
P
tot
Total Dissipation at T
amb
≤ 25
o
C
for 2N2219A
for 2N2222A
at T
C
≤ 25
o
C
for 2N2219A
for 2N2222A
0.8
0.5
3
1.8
W
W
W
W
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
TO-18 TO-39
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