This is information on a product in full production.
May 2012 Doc ID 16558 Rev 9 1/18
18
2N2222AHR
Hi-Rel 40 V - 0.8 A NPN transistor
Datasheet — production data
Features
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
■ Up to 100 krad(Si) low dose rate
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Figure 1. Internal schematic diagramI
Parameter ESCC JANS
BV
CEO min
40 V 50 V
I
C
(max) 0.8 A
h
FE
at 10 V - 150 mA 100
3
1
2
3
1
2
Pin 4 in LCC-3UB is connected to the metallic lid.
Table 1. Devices summary
(1)
Device Qualification Agency spec. Package Radiation level EPPL
JANS2N2222A
JANS MIL-PRF-19500/255 LCC-3UB
--
JANSR2N2222A 100 krad -
SOC2222AUB
ESCC 5201/002
LCC-3UB
-Yes
SOC2222AUBxxSW 100 krad Yes
SOC2222A
LCC-3
-Yes
SOC2222AxxSW 100 krad Yes
2N2222AHR
TO-18
--
2N2222ASW 100 krad -
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels
www.st.com
