2N1711
EPITAXIAL PLANAR NPN
DESCRIPTION
The 2N1711 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intented for use in high performance amplifier,
oscillator and sw itching circuits .
The 2N1711 is also used to advantage in
amplifiers where low noise is an import ant fact or.
®
INT E R NAL SCH E M ATI C DIAG RA M
September 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 75 V
V
CER
Collector-Emitter Voltage (R
BE
≤ 10Ω)
50 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 500 mA
P
tot
Total Dissipation at T
amb
≤ 25
o
C
at T
C
≤ 25
o
C
at T
C
≤ 100
o
C
0.8
3
1.7
W
W
W
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junctio n Te mperature 175
o
C
TO-39
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