1/8November 2002
.
STS2DPFS20V
P-CHANNEL 20V - 0.14 Ω - 2.5A S O-8
2.7V-DRIV E STripFET™ II MOSFET PLUS SCHOTTKY DIO DE
DESCRIPTION
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
SCHOTTKY ABSOL UTE MAXIMUM RATINGS
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on)
I
D
20 V
< 0.20Ω (@4.5V)
< 0.25Ω (@2.7V)
2.5 A
SCHOTTKY
I
F(AV)
V
RRM
V
F(MAX)
3 A 30 V 0.51 V
Symbol Parameter Value Unit
V
DS
Dain-so urce Voltag e (V
GS
= 0)
20 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kW)
20 V
V
GS
Gate- source Voltage ± 12 V
I
D
Drain Current (continuous) at T
C
= 25°C
2.5 A
I
D
Drain Current (continuous) at T
C
= 100°C
1.58 A
I
DM
(
•
)
Drain Current (pulsed) 10 A
P
tot
Total Dissipation at T
C
= 25°C
2W
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 30 V
I
F(RMS)
RMS Forward Curren 20 A
I
F(AV)
Average Forward Current
T
L
=125
o
C
δ =0.5
3A
I
FSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75 A
I
RSM
Non Repetitive Peak Reverse Current tp=100 µs1 A
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
SO-8
INTERNAL SCHEMAT IC DIAGRAM
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
