1/20September 2005
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM , ERA SE and READ OPE RATI ONS
■ ACCESS TIME: 55n s
■ PROGRAMMING TIME
– 10µs per Byte typical
■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS
■ PROGRA M/ERASE CONTR OLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufactu rer Code : 20h
– Device Code: E3h
■ ECOPACK
®
PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
V
CC
M29W040B
G
E
V
SS
8
