AI02074
19
A0-A18
W
DQ0-DQ7
V
CC
M29W040
G
E
V
SS
8
Figure 1. Logic Diagram
M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W040 is replacedby the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM,ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12µs typical
ERASE TIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Togglebits Protocol for
P/E.C. Status
MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20µA typical
– Automatic Stand-by mode
POWER DOWN SOFTWARE COMMAND
– Power-down mode: 1µA typical
100,000PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
A0-A18 Address Inputs
DQ0-DQ7 Data Input / Outputs
E Chip Enable
G Output Enable
W Write Enable
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
PLCC32 (K) TSOP32 (N)
8 x 20mm
November 1999 1/31
This is informationon a product stillin productionbut not recommendedfor new designs.
TSOP32 (NZ)
8 x 14mm
