DS05-20841-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M
×
8/512K
×
16) BIT
MBM29F800TA
-55/-70/-90
/MBM29F800BA
-55/-70/-90
■
FEATURES
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
• Minim um 100,000 write/erase cycles
• High perf ormance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
•Data
Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Low Vcc write inhibit
≤
3.2 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
• Hardware RESET
pin
Resets internal state machine to the read mode
• Sector protection
Hardware method disables any combination of sectors from write or erase operations
• Temporary sector unprotection
Temporary sector unprotection via the RESET
pin.
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
