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PRELIMINARY DATA
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
■ SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
–8µs per Byte/Word typical
■ 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F200BT Device Code: 00D3h
– M29F200BB Device Code: 00D4h
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)
Figure 1. Logic Diagram
AI02912
17
A0-A16
W
DQ0-DQ14
V
CC
M29F200BT
M29F200BB
E
V
SS
15
G
RP
DQ15A–1
BYTE
RB
